data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 1 general description this n-channel mosfet has been designed specifically to improve the overall efficiency and to minimize switch node ringing of dc-dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) , fast switching speed and body diode reverse recovery performance. the af15n50 is available in pdfn-56-8 package. features ? typ r ds(on) =14.32m ? @ v gs =10v, i d =15a ? typ r ds(on) =16.36m ? @ v gs =4.5v, i d =15a ? rohs compliant applications ? primary switch in isolated dc-dc ? synchronous rectifier ? load switch figure 1. package type of af15n50 option 1 option 2 pdfn-56-8
data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 2 pin configuration dnp package (pdfn-56-8) option 1 option 2 figure 2. pin configuration of af15n50 (top view) internal structure figure 3. internal structure of af15n50
data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 3 ordering information af15n50 - circuit type g1: green package dnp: pdfn-56-8 tr: tape & reel package part number ma rking id packing type pdfn-56-8 AF15N50DNPTR-G1 15n50dnp-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. absolute maximum ratings (note 1) t c =25c, unless otherwise specified. note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. parameter symbol value unit drain to source voltage v ds 50 v continuous drain current i d t c =25oc 15 a t c =100oc 15 pulsed drain current i dm 60 a gate to source voltage v gs 12 v power dissipation p d 31 w operating temperature range t op -55 to 150 oc storage temperature range t stg -55 to 150 oc
data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 4 recommended operating conditions parameter symbol condition value unit thermal resistance (note 2) ? ja junction to ambient 50 ? c/w thermal resistance ? jc ? junction to case 4 ? c/w note 2: device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square pad. electrical characteristics t c =25c, unless otherwise specified. static characteristics parameters symbol condi tions min typ max unit drain to source breakdown voltage v dss(br) v gs =0v, i d =0.25ma 50 v gate threshold voltage v gs(th) v ds =v gs , i d =0.25ma 0.5 0.9 2 v zero gate voltage drain current i dss v ds =50v, v gs =0v 1 ? a gate to source leakage current i gss v gs =10v, v ds =0v 10 ? a drain to source on-state resistance r ds(on) v gs =10v, i d =15a 10 14.32 20 m ? v gs =4.5v, i d =15a 12 16.36 30
data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 5 electrical characteristics (continued) t c =25c, unless otherwise specified. dynamic characteristics parameters symbol condi tions min typ max unit input capacitance c iss v gs =0v, v ds =18v, f=1mhz 1350 pf v gs =0v, v ds =25v, f=1mhz 1316 output capacitance c oss v gs =0v, v ds =18v, f=1mhz 110 pf v gs =0v, v ds =25v, f=1mhz 97 reverse transfer capacitance c rss v gs =0v, v ds =18v, f=1mhz 95 pf v gs =0v, v ds =25v, f=1mhz 85 turn-on delay time t d(on) v gs =10v, i d =15a, v dd =25v, r g =6 ? 4.162 ns rise time t r 14.85 turn-off delay time t d(off) 35.452 fall time t f 31.108 gate to source charge q gs v gs =0v to 10v, v dd =25v, i d =15a 3.2 nc gate to drain charge (miller charger) q gd 5.7 total gate charge q g 15.2 gate resistance r g 0.85 ?
data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 6 typical performance characteristics t c =25c, unless otherwise noted. figure 4. on region characteristics figure 5. typical junction capacitance figure 6. typical transfer characteristics figure 7. source to drain diode forward voltage 012345 -2 0 2 4 6 8 10 12 14 i d , drain current (a) v ds , drain to source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 i s , source current (a) v sd , source to drain voltage (v) 25 o c 125 o c 0 5 10 15 20 25 30 35 40 10 100 1000 10000 f=1mhz junction capacitance (pf) v ds , drain to source voltage (v) c iss ave c oss ave c rss ave 234567891011 0.00 0.01 0.02 0.03 0.04 0.05 i d =15a v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( ? ) -55 o c 25 o c 85 o c 125 o c 150 o c
data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 7 typical performance characteristics t c =25c, unless otherwise noted. figure 8. gate charge characteristics figure 9. r ds(on) vs. continuous drain current figure 10. soa, safe operation area figure 11. normalized on-resistance vs. t j 0 5 10 15 20 25 30 35 0 2 4 6 8 10 v gs , gate to source voltage (v) q g , gate charge (nc) v ds =25v i d =15a 0 2 4 6 8 101214161820 10 11 12 13 14 15 16 17 18 r ds(on) , drain to source on-resistance (m ? ) i d , continuous drain current (a) v gs =10v v gs =4.5v -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 normalnized drain to source on-resistance (m ? ) t j , junction temperature ( o c) v gs =4v v gs =10v i d =15a 0.01 0.1 1 10 100 0.01 0.1 1 10 100 r ds(on) dc pw=10s pw=1s pw=100ms pw=10ms pw=1ms pw=100 ? s i d , drain current (a) v ds , drain to source voltage (v) t j(max) =150 o c t a =25 o c single pulse dut on 1*mrp board v gs =10v
data sheet 50v n-channel mosfet af15n50 aug. 2013 rev. 1. 0 bcd semiconductor manufacturing limited 8 mechanical dimensions pdfn-56-8 unit: mm(inch) 1.200.10 4.700(0.185) 5.100(0.201) 1.000(0.039) 1.200(0.047) 5.600(0.220) 6.000(0.236) 0.100(0.004) max e 0.900(0.035) 1.100(0.043) 0.510(0.020) 0.710(0.028) 0.510(0.020) 0.710(0.028) 1.170(0.046) 1.370(0.054) 3.820(0.150) 4.020(0.158) 0.510(0.020) min 0.330(0.013) 0.510(0.020) 0.210(0.008) 0.340(0.013) 8 12 0.060(0.002) 0.200(0.008) symbol min(mm) max(mm) min(inch) max(inch) option 1 option 2 5.150(bsc) 5.100 0.203(bsc) 0.201 depth 0.05 +0 -0.05 3.180(0.125) 3.540(0.139) d 3.700(0.146) 4.100(0.161) 3.280(0.129) 3.680(0.145) 1.000(0.039) 1.400(0.055) d min(mm) max(mm) min(inch) max(inch) 5.900 6.150(bsc) 6.100 0.232 0.242(bsc) 0.240 e option 1 pin 1 mark option 1 option 2 -- --
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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